inchange semiconductor product specification silicon npn power transistors 2sc2497 2SC2497A description ? ? with to-126 package ? complement to type 2sa1096/a ? high collector to emitter voltage v ceo applications ? for low-frequency power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 70 v 2sc2497 50 v ceo collector- emitter voltage 2SC2497A open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 3 a 1.2* 1 p d total power dissipation t c =25 ?? 5* 2 w t j junction temperature 150 ?? t stg storage temperature -55 ?? +150 ?? note) *1: without heat sink *2: with a 100 ? 100 ? 2 mm a1 heat sink
inchange semiconductor product specification 2 silicon npn power transistors 2sc2497 2SC2497A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sc2497 50 v (br)ceo collector-emitter breakdown voltage 2SC2497A i c =2ma ; i b =0 60 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 70 v v cesat collector-emitter saturation voltage i c =1.5a ;i b =0.15a 1.0 v v besat base-emitter saturation voltage i c =1.5a ;i b =0.15a 1.5 v i ceo collector cut-off current v ce =10v; i b =0 100 | a i cbo collector cut-off current v cb =20v; i e =0 1 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe dc current gain i c =1a ; v ce =5v 80 220 c ob output capacitance i e =0 ; v cb =20v,f=1mhz 35 pf f t transition frequency i e =0.5a ; v cb =5v,f=200mhz 150 mhz ? h fe classifications r s 80-160 120-220
inchange semiconductor product specification 3 silicon npn power transistors 2sc2497 2SC2497A package outline fig.2 outline dimensions
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